Next Generation Wireless Amplifier Technology: BiSTA (Bipolar Stacked Transistor Architecture)

A new design for an integrated circuit amplifier operating at very high frequencies. Current high frequency amplifiers use expensive III-V technologies (GaAs, InP). This invention uses commercial silicon technology.

Has this invention been tested?

• Yes, results have been published in 2 peer reviewed scientific journals.
• This design has been fabricated using IBM 8HP BiCMOS SiGe commercial technology.
• Two prototype amplifiers have been built, extensively tested and measured to operate at frequencies of 2.4 GHz and 30 GHz.
• 2.4 GHz measures: PSAT=18.55 dBm, PAE=32.0 %, VBIAS=3.23 V.
• 30 GHz measures: PSAT=19.0 dBm , PAE=11.5 %, VBIAS=5.06 V.

Fig. 1 - Bi-Polar Stacked Transistor Architecture

Advantages:

• low cost of production
• large & mature manufacturing base
• high reliability
• high integration, system-on-single-chip
• solutions

Commercial low frequency applications:

• cellular phone systems
• WiFi
•  bluetooth amplifiers

Commercial high frequency applications:

• wireless-HDMI (blue-ray to TV interface)
• airport security imaging scanners
• medical imaging scanners
• automotive radar
• telecom long-haul back-end wireless communications (tower-to-back-office, tower-to-tower communication)
• building-to-building wireless communications

Military applications:

• satellite communications
• compact radar systems
• phased-array T/R systems